[其他]一种光源结构、光学投影模组、感测装置及设备

权利要求书

1.一种光源结构，其用于发出不规则分布的光斑图案，所述光源结构包括半导体基底及形成在所述半导体基底上的多个不规则分布的发光单元，所述半导体基底的发光表面上定义出一图案光发光区域，所述图案光发光区域为矩形，以所述图案光发光区域左下角顶点为原点，相交于左下角的两条直角边延展方向分别为横坐标轴和纵坐标轴，坐标单位为微米建立坐标系来描述所述发光单元的位置，所述发光单元的分布图案选自在具有一百个发光单元的基础发光单元分布图案中通过加入或减少一个或多个发光单元或者改变一个或多个发光单元的位置获得的多种第一发光单元分布图案中的一种，所述基础发光单元分布图案的一百个发光单元的坐标值为：P1(170.55,157.95)；P2(146.25,145.35)；P3(189.45,177.75)；P4(175.95,91.35)；P5(202.95,89.55)；P6(211.95,193.95)；P7(230.85,174.15)；P8(125.55,220.05)；P9(213.75,40.95)；P10(186.75,39.15)；P11(10.35,153.45)；P12(95.85,94.05)；P13(171.45,61.65)；P14(186.75,12.15)；P15(105.75,254.25)；P16(120.15,152.55)；P17(227.25,108.45)；P18(71.55,107.55)；P19(343.35,108.45)；P20(247.05,68.85)；P21(46.35,119.25)；P22(65.25,80.55)；P23(201.15,276.75)；P24(254.25,113.85)；P25(108.45,281.25)；P26(192.15,250.65)；P27(27.45,191.25)；P28(40.05,166.95)；P29(22.05,94.95)；P30(22.05,67.95)；P31(71.55,220.05)；P32(262.35,16.65)；P33(49.05,235.35)；P34(227.25,267.75)；P35(112.05,71.55)；P36(5.85,274.95)；P37(139.95,67.05)；P38(35.55,43.65)；P39(25.65,249.75)；P40(76.95,134.55)；P41(4.95,219.15)；P42(280.35,106.65)；P43(327.15,161.55)；P44(93.15,31.95)；P45(52.65,262.35)；P46(275.85,281.25)；P47(8.55,37.35)；P48(60.75,33.75)；P49(42.75,13.05)；P50(87.75,58.95)；P51(175.05,130.05)；P52(199.35,142.65)；P53(156.15,110.25)；P54(169.65,196.65)；P55(142.65,198.45)；P56(133.65,94.05)；P57(114.75,113.85)；P58(220.05,67.95)；P59(131.85,247.05)；P60(158.85,248.85)；P61(335.25,134.55)；P62(249.75,193.95)；P63(174.15,226.35)；P64(158.85,275.85)；P65(239.85,33.75)；P66(225.45,135.45)；P67(118.35,179.55)；P68(274.05,180.45)；P69(2.25,179.55)；P70(98.55,219.15)；P71(299.25,168.75)；P72(280.35,207.45)；P73(144.45,11.25)；P74(91.35,174.15)；P75(237.15,6.75)；P76(153.45,37.35)；P77(318.15,96.75)；P78(305.55,121.05)；P79(323.55,193.05)；P80(323.55,220.05)；P81(274.05,67.95)；P82(83.25,271.35)；P83(296.55,52.65)；P84(118.35,20.25)；P85(233.55,216.45)；P86(339.75,13.05)；P87(205.65,220.95)；P88(310.05,244.35)；P89(319.95,38.25)；P90(268.65,153.45)；P91(340.65,68.85)；P92(65.25,181.35)；P93(18.45,126.45)；P94(252.45,256.05)；P95(292.95,25.65)；P96(69.75,6.75)；P97(337.05,250.65)；P98(284.85,254.25)；P99(302.85,274.95)；P100(257.85,229.05)，所述第一发光单元分布图案与所述基础发光单元分布图案之间的相似程度等于或者超过预设阈值，所述相似程度阈值的定义方式为将所述第一发光单元图案经过有限次数不改变发光单元之间相关性的图形变换后获得与所述基础发光单元分布图案朝向一致且发光单元大小相同的第二发光单元图案，所述第二发光单元图案与所述基础发光单元分布图案运用归一化相关系数匹配法计算得出的相似度数值等于或超过0.25的预设阈值。